半导体物理电子学 (美)李(Li,S.S.) 编著 科学出版社，【正版可开发票】 mobi 下载 网盘 caj lrf pdf txt 阿里云

本书全面介绍了半导体物理的基本内容，这些内容是理解半导体的物理性质和光电器件制备原理的基础。本书系统性强，合理地安排了物理原理，表征法以及半导体材料和器件的应用等内容，兼顾了物理学家、材料学家和设备工程师的需求。本书反映了半导体技术在过去十年的进步，包括许多新出现并已进入市场的半导体器件。本书适合于电子工程，材料科学，物理和化学工程的研究生，也可供半导体工业的过程工程师和设备工程师参考。

Preface

1.Classification of Solids and Crystal Structure

　1.1　Introduction

　1.2　The Bravais Lattice

　1.3　The Crystal Structure

　1.4　Miller Indices and Crystal Planes

　1.5　The Reciprocal Lattice and Brillouin Zone

　1.6　Types of Crystal Bindings

　1.7　Defects in a Crystalline Solid

　　Problems

　　Bibliography

2.Lattice Dynamics

　2.1　Introduction

　2.2　The One-Dimensional Linear Chain

　2.3　Dispersion Relation for a Three-Dimensional Lattice

　2.4　The Concept of Phon***

　2.5　The Density of States and Lattice Spectrum

　2.6　Lattice Specific Heat

　　Problems

　　References

　　Bibliography

3.Semiconductor Statistics

　3.1　Introduction

　3.2　Maxwell-Boltzmann Statistics

　3.3　Fermi-Dirac Statistics

　3.4　Bose-Einstein Statistics

　3.5　Statistics for the Shallow-Impurity States in a Semiconductor

　　Problems

　　Bibliography

4.Energy Band Theory

　4.1　Introduction

　4.2　Basic Quantum Concepts and Wave Mechanics

　4.3　The Bloch-Floquet Theorem

　4.4　The Kronig-Penney Model

　4.5　The Nearly Free Electron Appromation

　4.6　The Tight-Binding Appromation

　4.7　Energy Band Structures for Some Semiconductors

　4.8　The Effective Mass Concept for Electr*** and Holes

　4.9　Energy Band Structures and Density of States for Low-Dimensional Systems

　　Problems

　　References

　　Bibliography

5.Equilibrium Properties of Semiconductors

　5.1　Introduction

　5.2　Densities of Electr*** and Holes in a Semiconductor

　5.3　Intrinsic Semiconductors

　5.4　Extrinsic Semiconductors

　5.5　Ionization Energies of Shallow-and Deep-Level Impurities

　5.6　Hall Effect,Electrical Conductivity,and Hall Mobility

　5.7　Heavy Doping Effects in a Degenerate Semiconductor

　　Problems

　　References

　　Bibliography

6.Excess Carrier Phenomenon in Semiconductors

　6.1　Introduction

　6.2　Nonradiative Rebination: The Shockley-Read-Hall Model

　6.3　Band-to-Band Radiative Rebination

　***　Band-to-Band Auger Rebination

　6.5　Basic Semiconductor Equati***

　6.6　The Charge-Neutrality Equation

　6.7　The Haynes-Shockley Experiment

　6.8　The P***oconductivity Decay Experiment

　6.9　Surface States and Surface Rebination Velocity

　6.10 Deep-Level Transient Spectroscopy Technique

　6.11 Surface P***ovoltage Technique

　　Problems

　　References

　　Bibliography

7.Transport Properties of Semiconductors

8.Scattering Mechanisms and Carrier Moblities in Semiconductors

9.Optical Properties and P***oelectric Effects

10.Metal-Semiconductor Contacts

11.P-n Junction Diodes

12.Solar Cells and P***odetectors

13.Light-Emitting Devices

14.Bipolar Juction Transistors

15.Metal-Ode-Semiconductor Field-Effect Transistors

16.High-Speed Ⅲ-Ⅴ Semiconductor Devices

Soluti*** to Selected Problems

Appendix

Index

暂无相关内容，正在全力查找中

暂无出版社相关信息，正在全力查找中！

暂无相关书籍摘录，正在全力查找中！

在线阅读地址：半导体物理电子学 (美)李(Li,S.S.) 编著 科学出版社，【正版可开发票】在线阅读

在线听书地址：半导体物理电子学 (美)李(Li,S.S.) 编著 科学出版社，【正版可开发票】在线收听

在线购买地址：半导体物理电子学 (美)李(Li,S.S.) 编著 科学出版社，【正版可开发票】在线购买

暂无原文赏析，正在全力查找中！

暂无其它内容！