半导体物理性能手册 第2卷（上） mobi 下载 网盘 caj lrf pdf txt 阿里云

　　《Springer手册精选原版系列：半导体物理性能手册（第2卷 上册）》介绍了各族半导体、化合物半导体的物理性能，包括：结构特性、热学性质、弹性性质、声子与晶格振动性质、集体效应及相关性质、能带结构：能带隙、能带结构：电子和空穴的有效质量、电子形变势、电子亲和能与肖特基势垒高度、光学性质、弹光、电光和非线性光学性质、载流子输运性质。

Preface

Acknowledgments

Contents of Other Volumes

1 Cubic Boron Nitride (c-BN)

1.1 Structural Properties

1.1.1 Ionicity

1.1.2 Elemental Isotopic Abundance and Molecular Weight

1.1.3 Crystal Structure and Space Group

1.1.4 Lattice C***tant and Its Related Parameters

1.1.5 Structural Phase Transition

1.1.6 Cleavage Plane

1.2 Thermal Properties

1.2.1 Melting Point and Its Related Parameters

1.2.2 Specific Heat

1.2.3 Debye Temperature

1.2.4 Thermal Expansion Coefficient

1.2.5 Thermal Conductivity and Diffusivity

1.3 Elastic Properties

1.3.1 Elastic C***tant

1.3.2 Third-Order Elastic C***tant

1.3.3 Young's Modulus, Poisson's Ratio, and Similar

1.3.4 Microhardness

1.3.5 Sound Velocity

1.4 Phon*** and Lattice Vibronic Properties

1.4.1 Phonon Dispersion Relation

1.4.2 Phonon Frequency

1.4.3 Mode Gruneisen Parameter

1.4.4 Phonon Deformation Potential

1.5 Collective Effects and Related Properties

1.5.1 Piezoelectric C***tant

1.5.2 Frohlich Coupling C***tant

1.6 Energy-Band Structure: Energy-Band Gaps

1.6.1 Basic Properties

1.6.2 Eo-Gap Region

1.6.3 Higher-Lying Direct Gap

1.*** Lowest Indirect Gap

1.6.5 Conduction-Valley Energy Separation

1.6.6 Direct-Indirect-Gap Transition Pressure

1.7 Energy-Band Structure: Electron and Hole Effective Masses l

1.7.1 Electron Effective Mass: F Valley

1.7.2 Electron Effective Mass: Satellite Valley

1.7.3 Hole Effective Mass

1.8 'Electronic Deformation Potential

1.8.1 Intravalley Deformation Potential: I- Point

1.8.2 Intravalley Deformation Potential: High-Symmetry Points

1.8.3 Intervalley Deformation Potential

1.9 Electron Affinity and Sc***tky Barrier Height

1.9.1 Electron Affinity

1.9.2 Sc***tky Barrier Height

1.10 Optical Properties

1.10.1 Summary of Optical Dispersion Relati***

1.10.2 The Reststrahlen Region

1.10.3 At or Near the Fundamental Absorption Edge

1.10.4 The Interband Transition Region

1.10.5 Free-Carrier Absorption and Related Phenomena

1.11 Elastooptic, Electrooptic, and Nonlinear Optical Properties

1.11.1 Elastooptic Effect

1.11.2 Linear Electrooptic C***tant

1.11.3 Quadratic Electrooptic C***tant

1.11.4 Franz-Keldysh Effect

1.11.5 Nonlinear Optical C***tant

1.12 Carrier Transport Properties

1.12.1 Low-Field Mobility: Electr***

1.12.2 Low-Field Mobility: Holes

1.12.3 High-Field Transport: Electr***

1.12.4 High-Field Transport: Holes

1.12.5 Minority-Carrier Transport: Electr*** in p-Type Materials

1.12.6 Minority-Carrier Transport: Holes in n-Type Materials

……

2 Hexagonal Boron Nitride (h-BN)

3 Boron Phosphide (BP)

4 Boron Arsenide (BAs)

5 Wurtzite Aluminum Nitride (w-AIN)

6 Cubic Aluminum Nitride (c-AIN)

8 Aluminum Arsenide (AIAs)

9 Aluminum Antimonide (AISb)

暂无相关内容，正在全力查找中

暂无出版社相关信息，正在全力查找中！

暂无相关书籍摘录，正在全力查找中！

在线阅读地址：半导体物理性能手册 第2卷（上）在线阅读

在线听书地址：半导体物理性能手册 第2卷（上）在线收听

在线购买地址：半导体物理性能手册 第2卷（上）在线购买

暂无原文赏析，正在全力查找中！

暂无其它内容！